Sandisk and SK Hynix could crush DRAM limits with a new flash memory design aimed at powering future AI models at massive scale

Sandisk and SK Hynix could crush DRAM limits with a new flash memory design aimed at powering future AI models at massive scale

Sandisk and SK Hynix could crush DRAM limits with a new flash memory design aimed at powering future AI models at massive scale


  • Sandisk and SK Hynix propose flash-powered high-bandwidth memory to handle larger AI models
  • High Bandwidth Flash could store far more data than DRAM-based HBM for AI workloads
  • Energy savings from NAND’s non-volatility could reshape AI data center cooling strategies

Sandisk and SK Hynix have signed an agreement to develop a memory technology which could change how AI accelerators handle data at scale.

The companies aim to standardize “High Bandwidth Flash” (HBF), a NAND-based alternative to traditional high-bandwidth memory used in AI GPUs.



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